| PART |
Description |
Maker |
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| ES6U1 |
1.5V Drive Pch SBD MOSFET
|
Rohm
|
| QS6U24 QS6U241 |
4V Drive Pch SBD MOS FET
|
Rohm
|
| US5U291 US5U29 |
2.5V Drive Pch SBD MOS FET
|
ROHM[Rohm]
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| FTD7003 |
Pch Pch
P-Channel Silicon MOSFET High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| SP8J5FRATB |
4V Drive Pch Pch MOSFET (Corresponds To AEC-Q101)
|
ROHM
|
| QS8J13 QS8J13TR |
-12V Pch Pch Middle Power MOSFET
|
ROHM
|
| FTD1003 |
Pch Pch
Load Switching Applications
|
Sanyo Semicon Device
|
| QS8J1 |
1.5V Drive Pch Pch MOSFET
|
Rohm
|
| VT6J1T2CR |
1.2V Drive Pch Pch MOSFET
|
ROHM
|
